dmn55d0ut document number: ds31330 rev. 5 - 2 1 of 5 www.diodes.com december 2012 ? diodes incorporated dmn55d0ut new product n-channel enhancement mode mosfet features ? low on-resistance ? very low gate threshold voltage ? low input capacitance ? esd protected gate to 2kv ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot523 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish annealed over alloy 42 leadframe (lead free plating). solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.002 grams (approximate) ordering information (note 4) part number qualification case packaging dmn55d0ut -7 commercial sot523 3000/tape & reel dmn55d0utq -7 automotive sot523 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporated?s definitions of halogen an d antimony free, "green" and lead-free. ? 3. halogen and antimony free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm to tal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 code u v w x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot523 top view equivalent circuit to p view nac = product type marking code ym = date code marking y = year (ex: u = 2007) m = month (ex: 9 = september) nac ym source gate protection diode gate drain esd protected to 2kv gs d
dmn55d0ut document number: ds31330 rev. 5 - 2 2 of 5 www.diodes.com december 2012 ? diodes incorporated dmn55d0ut new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 50 v gate-source voltage v gss 12 v drain current (note 5) continuous i d 160 ma pulsed drain current (note 5) i dm 560 ma thermal characteristics characteristic symbol value units total power dissipation (note 5) p d 200 mw thermal resistance, junction to ambient r ja 625 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 50 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 1 a v ds = 50v, v gs = 0v gate-body leakage i gss ? ? 1.0 5.0 a v gs = 8v, v ds = 0v v gs = 12v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) 0.7 0.8 1.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? 3.1 4 v gs = 4v, i d = 100ma ? 4 5 v gs = 2.5v, i d = 80ma forward transconductance g fs 180 ? ? ms v ds = 10v, i d = 100ma, f = 1.0khz dynamic characteristics input capacitance c iss ? 25 ? pf v ds = 10v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 5 ? pf reverse transfer capacitance c rss ? 2.1 ? pf notes: 5. device mounted on fr-4 pcb, pad layout as shown on diodes inc. suggested pad layout do cument ap02001, which can be fo und on our website at http://www.diodes.com. 6. short duration pulse test used to minimize self-heating effect.
dmn55d0ut document number: ds31330 rev. 5 - 2 3 of 5 www.diodes.com december 2012 ? diodes incorporated dmn55d0ut new product fig. 1 typical output characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v = 1.0v gs v = 1.5v gs v = 2.5v gs v = 4.5v gs v = 10v gs v = 3.0v gs fig. 2 typical transfer characteristics v , gate source voltage (v) gs i, d r ain c u r r en t (a) d 0 0.1 0.2 0.3 0.4 0.5 01 234 v = 10v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a fig. 3 typical on-resistance vs. drain current and gate voltage i , drain current (a) d r , drain-source on-resistance ( ) ds(on) 1 10 0.001 0.01 0.1 1 v = 4.0v gs v= 2.5v gs i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 1 10 0 0.1 0.2 0.3 0.4 0.5 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a fig. 5 on-resistance variation with temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , drain-to-source resistance (normalized) ds(on) v = 2.5v i = 80ma gs d v = 4v i = 100ma gs d 0.4 fig. 6 typical capacitance 0 5 10 15 20 25 30 35 40 v , drain-source voltage (v) ds c , c a p a c i t a n c e (p f ) 0 5 10 15 20 25 30 35 f = 1mhz v = 0v gs c iss c oss c rss
dmn55d0ut document number: ds31330 rev. 5 - 2 4 of 5 www.diodes.com december 2012 ? diodes incorporated dmn55d0ut new product v , gate threshold voltage (v) gs(th) fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.5 0.6 0.7 0.8 0.9 1.0 1.1 i = 250a d v , source-drain voltage (v) sd i, s o u r c e c u r r en t (a) s fig. 8 diode forward voltage vs. current 0.0001 0.001 0.01 0.1 1 0.1 0.3 0.5 0.7 0.9 1.1 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.001 0.01 0.1 1 100 r(t), t r ansien t t h e r mal r esis t an c e fig. 9 transient thermal response 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse duration time (s) 1 0.000001 t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * r r = 625c/w ? ja ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. sot523 dim min max typ a 0.15 0.30 0.22 b 0.75 0.85 0.80 c 1.45 1.75 1.60 d ? ? 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 j 0.00 0.10 0.05 k 0.60 0.80 0.75 l 0.10 0.30 0.22 m 0.10 0.20 0.12 n 0.45 0.65 0.50 0 8 ? all dimensions in mm a m j l d b c h k g n
dmn55d0ut document number: ds31330 rev. 5 - 2 5 of 5 www.diodes.com december 2012 ? diodes incorporated dmn55d0ut new product suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com dimensions value (in mm) z 1.8 x 0.4 y 0.51 c 1.3 e 0.7 x e y c z
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